Title of Article |
Title of Journal |
Impact Factor |
% |
AlF3 film deposited by IAD with end-Hall ion source using SF6 as working gas |
Applied Surface Science |
2.103 |
11.00 |
Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions |
Applied Surface Science |
2.103 |
11.00 |
Phase coexistence and Mn-doping effect in lead-free ferroelectric (Na1/2Bi1/2)TiO3 crystals |
Applied Physics Letters |
3.844 |
13.60 |
Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires |
Applied Physics Letters |
3.844 |
13.60 |
Exchange bias in spin glass (FeAu)/NiFe thin films |
Applied Physics Letters |
3.844 |
13.60 |
Compensation between magnetoresistance and switching current in Co/Cu/Co spin valve pillar structure |
Applied Physics Letters |
3.844 |
13.60 |
Controlling microstructure and magnetization process of FePd (001) films by staged thermal modification |
Applied Physics Letters |
3.844 |
13.60 |
Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition |
Applied Surface Science |
2.103 |
11.10 |
Nitrogen bonding in aluminum oxynitride films |
Applied Surface Science |
2.103 |
11.10 |
Formation and magnetization reversal mechanisms of nano-size Fe arrays prepared on anodic aluminum oxide templates |
Thin Solid Films |
1.890 |
22.20 |